All Transistors. 2SD1412O Datasheet

 

2SD1412O Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1412O

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 10 MHz

Collector Capacitance (Cc): 250 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: ISO220

2SD1412O Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1412O Datasheet (PDF)

3.1. 2sd1412a.pdf Size:216K _toshiba

2SD1412O
2SD1412O



3.2. 2sd1412.pdf Size:184K _toshiba

2SD1412O
2SD1412O



 3.3. 2sd1412.pdf Size:272K _inchange_semiconductor

2SD1412O
2SD1412O

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1412 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) ·Complement to Type 2SB1019 APPLICATIONS ·High current switching applications. ·Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) S

Datasheet: 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 , 2N3201 , 2N4401 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2N3208 , 2N3209 , 2N3209AQF .

 

 
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