All Transistors. 2SD1412O Datasheet

 

2SD1412O Datasheet and Replacement


   Type Designator: 2SD1412O
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 70 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 10 MHz
   Collector Capacitance (Cc): 250 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO220F
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2SD1412O Datasheet (PDF)

 7.1. Size:184K  toshiba
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2SD1412O

 7.2. Size:216K  toshiba
 2sd1412a.pdf pdf_icon

2SD1412O

 7.3. Size:215K  inchange semiconductor
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2SD1412O

isc Silicon NPN Power Transistor 2SD1412DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 4ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 50V (Min)(BR)CEOComplement to Type 2SB1019Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applications.Power amplifier applications.

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Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2SC3620 | NSV1C201LT1G | TTA1586FU | NPS4890 | 71T2 | MRF326 | BD1540

Keywords - 2SD1412O transistor datasheet

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