2SD1412O Specs and Replacement

Type Designator: 2SD1412O

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Collector Capacitance (Cc): 250 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO220F

 2SD1412O Substitution

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2SD1412O datasheet

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2SD1412O

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2SD1412O

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 7.3. Size:215K  inchange semiconductor

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2SD1412O

isc Silicon NPN Power Transistor 2SD1412 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 4A CE(sat) C Collector-Emitter Breakdown Voltage- V = 50V (Min) (BR)CEO Complement to Type 2SB1019 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching applications. Power amplifier applications. ... See More ⇒

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Detailed specifications: 2SD1409R, 2SD1409Y, 2SD141, 2SD1410, 2SD1411, 2SD1411O, 2SD1411Y, 2SD1412, TIP41C, 2SD1412Y, 2SD1413, 2SD1414, 2SD1415, 2SD1416, 2SD1417, 2SD1418, 2SD1419

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