All Transistors. 2SD1458 Datasheet

 

2SD1458 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1458

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector Current |Ic max|: 0.7 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 1500

Noise Figure, dB: -

Package: SOT33

2SD1458 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1458 Datasheet (PDF)

1.1. 2sd1458.pdf Size:48K _st

2SD1458
2SD1458

SD1458 RF & MICROWAVE TRANSISTORS TV\LINEAR APPLICATIONS .170 - 230 MHz .28 VOLTS .IMD -55 dB .COMMON EMITTER .GOLD METALLIZATION .INTERNAL INPUT MATCHING .HIGH SATURATED POWER CAPABILITY .500 6LFL (M111) .DESIGNED FOR HIGH POWER LINEAR epoxy sealed OPERATION ORDER CODE BRANDING .P 14 W MIN. WITH 14.0 dB GAIN OUT = SD1458 SD1458 PIN CONNECTION DESCRIPTION The SD1458 is a gold m

1.2. 2sd1458.pdf Size:37K _panasonic

2SD1458
2SD1458

Transistor 2SD1458 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05 Ab

 1.3. 2sd1458 e.pdf Size:41K _panasonic

2SD1458
2SD1458

Transistor 2SD1458 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05 Ab

Datasheet: 2SC4323 , 2SC4324 , 2SC4325 , 2SC4326 , 2SC4327 , 2SC4328 , 2SC4329 , 2SC433 , BC237 , 2SC4331 , 2SC4332 , 2SC4333 , 2SC4334 , 2SC4335 , 2SC4336 , 2SC4337 , 2SC4338 .

 
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