All Transistors. 2SD1458 Datasheet

 

2SD1458 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1458

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector Current |Ic max|: 0.7 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 1500

Noise Figure, dB: -

Package: SOT33

2SD1458 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1458 Datasheet (PDF)

1.1. 2sd1458.pdf Size:48K _st

2SD1458
2SD1458

SD1458 RF & MICROWAVE TRANSISTORS TV\LINEAR APPLICATIONS .170 - 230 MHz .28 VOLTS .IMD -55 dB .COMMON EMITTER .GOLD METALLIZATION .INTERNAL INPUT MATCHING .HIGH SATURATED POWER CAPABILITY .500 6LFL (M111) .DESIGNED FOR HIGH POWER LINEAR epoxy sealed OPERATION ORDER CODE BRANDING .P 14 W MIN. WITH 14.0 dB GAIN OUT = SD1458 SD1458 PIN CONNECTION DESCRIPTION The SD1458 is a gold m

1.2. 2sd1458.pdf Size:37K _panasonic

2SD1458
2SD1458

Transistor 2SD1458 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05 Ab

 1.3. 2sd1458 e.pdf Size:41K _panasonic

2SD1458
2SD1458

Transistor 2SD1458 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05 Ab

Datasheet: 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 , 2N3201 , 2N4401 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2N3208 , 2N3209 , 2N3209AQF .

 

 
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