Type Designator: 2SD1502 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 4000
Noise Figure, dB: -
Package: TO220
8.5. Size:33K hitachi
2sd1504.pdf 
2SD1504 Silicon NPN Epitaxial Application Low frequency amplifier, Muting Outline SPAK 1. Emitter 1 2 2. Collector 3 3. Base 2SD1504 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO 5V Collector current IC 0.5 A Collector peak current ic (peak) 1.0 A Collect... See More ⇒
8.6. Size:187K inchange semiconductor
2sd1503.pdf
isc Product Specification isc Silicon NPN Power Transistor 2SD1503 DESCRIPTION High Collector-Base Voltage - V = 900V(Min) CBO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒
8.7. Size:212K inchange semiconductor
2sd1506.pdf
isc Silicon NPN Power Transistor 2SD1506 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@I = 2A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB1065 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR... See More ⇒
8.8. Size:210K inchange semiconductor
2sd1500.pdf
isc Silicon NPN Darlington Power Transistor 2SD1500 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 10A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =2... See More ⇒
8.9. Size:213K inchange semiconductor
2sd1505.pdf
isc Silicon NPN Power Transistor 2SD1505 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@I = 2A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB1064 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR... See More ⇒
8.10. Size:211K inchange semiconductor
2sd1509.pdf
isc Silicon NPN Darlington Power Transistor 2SD1509 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = 1A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I =1A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purp... See More ⇒
