All Transistors. 2SD1589O Datasheet

 

2SD1589O Datasheet and Replacement


   Type Designator: 2SD1589O
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 5000
   Noise Figure, dB: -
   Package: TO220
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2SD1589O Datasheet (PDF)

 7.1. Size:65K  no
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2SD1589O

 7.2. Size:117K  jmnic
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2SD1589O

Product Specification www.jmnic.com Silicon Power Transistors 2SD1589 DESCRIPTION With TO-220Fa package DARLINGTON Complement to type 2SB1098 Low speed switching APPLICATIONS Low frequency power amplifier Low speed switching industrial use PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIM

 7.3. Size:217K  inchange semiconductor
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2SD1589O

isc Silicon NPN Darlington Power Transistor 2SD1589DESCRIPTIONCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 2ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 2AFE CComplement to Type 2SB1098Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed switc

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History: 2SA2119GP | 2SA956 | 2N399 | NJW0281GT4TL | DTL1642 | BC849CLT1G | 3DD5G

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