All Transistors. 2SD1609B Datasheet

 

2SD1609B Datasheet and Replacement


   Type Designator: 2SD1609B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.25 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140 MHz
   Collector Capacitance (Cc): 3.8 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO126
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2SD1609B Datasheet (PDF)

 7.1. Size:84K  utc
 2sd1609.pdf pdf_icon

2SD1609B

UTC 2SD1609 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR FEATURES * Low frequency high voltage amplifier 1TO-1261:EMITTER 2:COLLECTOR 3:BASEABSOLUTE MAXIMUM RATINGS (Ta=25C, unless otherwise specified) PARAMETER SYMBOL MIN MAX UNITCollector-Base Voltage BVCBO 160 VCollector-Emitter Voltage BVCEO 160 VEmitter-Base Voltage BVEBO 5 VCollector Curre

 7.2. Size:32K  hitachi
 2sd1609 2sd1610.pdf pdf_icon

2SD1609B

2SD1609, 2SD1610Silicon NPN EpitaxialApplicationLow frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110OutlineTO-126 MOD1. Emitter2. Collector3. Base123Absolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SD1609 2SD1610 UnitCollector to base voltage VCBO 160 200 VCollector to emitter voltage VCEO 160 200 VEmitter to base voltage VEB

 7.3. Size:193K  inchange semiconductor
 2sd1609.pdf pdf_icon

2SD1609B

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1609DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOGood Linearity of hFE100% avalanche testedComplement to Type 2SB1109Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency and high-voltage amplifierapplica

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History: ZT66 | 2SB1144S | BF420A | 2N2473 | BTB1424AT3 | 2N3183 | MM4019

Keywords - 2SD1609B transistor datasheet

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