All Transistors. 2SD1635 Datasheet

 

2SD1635 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1635

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 175 °C

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO3

2SD1635 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1635 Datasheet (PDF)

4.1. 2sd1631.pdf Size:161K _toshiba

2SD1635
2SD1635

2SD1631 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1631 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications • High DC current gain: hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C • Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Maximum Ratings (

4.2. 2sd1630.pdf Size:125K _nec

2SD1635
2SD1635

 4.3. 2sd1638.pdf Size:44K _rohm

2SD1635

4.4. 2sd1637.pdf Size:47K _rohm

2SD1635

 4.5. 2sd1634.pdf Size:107K _panasonic

2SD1635
2SD1635

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

4.6. 2sd1632.pdf Size:92K _panasonic

2SD1635
2SD1635

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

4.7. 2sd1633.pdf Size:90K _panasonic

2SD1635
2SD1635

Power Transistors 2SD1633 Silicon NPN triple diffusion planar type darlington Unit: mm For voltage switching 10.00.2 4.20.2 5.50.2 2.70.2 Features ? 3.10.1 High-speed switching Satisfactory linearity of forward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw 1.30.2 1.40.1 Absolute Maximum Ratings TC = 25C 0.5+0.2

4.8. 2sd1634.pdf Size:116K _jmnic

2SD1635
2SD1635

Product Specification www.jmnic.com Silicon Power Transistors 2SD1634 DESCRIPTION · ·With TO-220Fa package ·DARLINGTON ·High speed switching ·Good linearity of hFE APPLICATIONS ·Power switching PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25? SYMBOL PARAMETER CONDITIONS VALUE UNIT

4.9. 2sd1638.pdf Size:69K _jmnic

2SD1635
2SD1635

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1638 DESCRIPTION · · ·With TO-126 package ·DARLINGTON APPLICATIONS ·For low frequency and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collect

4.10. 2sd1634.pdf Size:127K _inchange_semiconductor

2SD1635
2SD1635

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1634 DESCRIPTION Ў¤ With TO-220Fa package Ў¤ DARLINGTON Ў¤ High speed switching Ў¤ Good linearity of hFE APPLICATIONS Ў¤ Power switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg

4.11. 2sd1638.pdf Size:114K _inchange_semiconductor

2SD1635
2SD1635

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1638 DESCRIPTION Ў¤ With TO-126 package Ў¤ DARLINGTON APPLICATIONS Ў¤ For low frequency and power amplifier applications PINNING(see Fig.2) PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg IN

4.12. 2sd1632.pdf Size:122K _inchange_semiconductor

2SD1635
2SD1635

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1632 DESCRIPTION Ў¤ With TO-3PFa package Ў¤ High voltage ,high speed Ў¤ Built-in damper diode Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCB

4.13. 2sd1633.pdf Size:129K _inchange_semiconductor

2SD1635
2SD1635

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1633 DESCRIPTION Ў¤ With TO-220Fa package Ў¤ DARLINGTON Ў¤ High speed switching Ў¤ Good linearity of hFE APPLICATIONS Ў¤ Power switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAM

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 431 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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