2SD1697 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD1697
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 4000
Noise Figure, dB: -
Package: SP8
2SD1697 Transistor Equivalent Substitute - Cross-Reference Search
2SD1697 Datasheet (PDF)
2sd1691.pdf
DATA SHEETSILICON POWER TRANSISTOR2SD1691NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCEY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) Large current capacity and low VCE(sat): IC(DC) = 5.0 A, IC(pulse) = 8.0 A VCE(sat) = 0.1 V TYP. (@IC = 2.0 A, IB = 0.2 A) Large power dissipation TO-126 type power transistor PT = 1.3 W (@Ta = 25
2sd1695.pdf
DATA SHEETSILICON POWER TRANSISTOR2SD1695NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGThe 2SD1695 is a Darlington connection transistor and PACKAGE DRAWING (UNIT: mm)incorporates a dumper diode between the collector and emitter anda constant voltage diode and protection elements between thecollector and base. T
2sd1692.pdf
DATA SHEETSILICON POWER TRANSISTOR2SD1692NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FEATURES PACKAGE DRAWING (UNIT: mm) High DC current gain due to Darlington connection Large current capacity and low VCE(sat) Large power dissipation TO-126 type power transistor Complementary transistor: 2SB1149 ABSOLUTE MAXIMUM RATINGS (Ta = 25C) Parameter
2sd1691.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SD1691 NPN SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE 11LARGE CURRENT TO-220F1TO-220 FEATURES *High Power Dissipation 11*Complementary to 2SB1151 TO-251 TO-25211TO-126CTO-126 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2SD1691L-x-TA3-T 2SD1691
st2sd1691t.pdf
ST 2SD1691T NPN Silicon Epitaxial Power Transistor For Low-Frequencey Power Amplifiers and Mid-Speed Switching The transistor is subdivided into three groups, M, L and K, according to its DC-DC current gain. ECBTO-126 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Symbol Value UnitParameter VCBO 60 VCollector to Base Voltage VCEO 60 VCollector to Emitter
2sd1699.pdf
SMD Type TransistorsNPN Transistors2SD1699SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.8A Collector Emitter Voltage VCEO=80V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage V
2sd1691.pdf
isc Silicon NPN Power Transistor 2SD1691DESCRIPTIONHigh Collector Current -I = 5ACLow Collector Saturation Voltage: V = 0.3V(Max.)@ I = 2ACE(sat) CComplement to Type 2SB1151Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converter, or driver of solenoidor motor.ABSOLUTE MAXIMUM RATINGS(T =
2sd1692.pdf
isc Silicon NPN Darlington Power Transistor 2SD1692DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 100V(min.)CEO(SUS)DC Current Gain: h = 2000(Min.) @ I = 1.5 AFE CComplement to Type 2SB1149Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier applications.ABSOLUTE MAXI
Datasheet: 2SD1692 , 2SD1692G , 2SD1692O , 2SD1692Y , 2SD1693 , 2SD1694 , 2SD1695 , 2SD1696 , A1015 , 2SD1698 , 2SD1699 , 2SD17 , 2SD170 , 2SD1700 , 2SD1701 , 2SD1702 , 2SD1703 .
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