2SD1698 Datasheet, Equivalent, Cross Reference Search

2SD1698 Transistor Equivalent Substitute - Cross-Reference Search

2SD1698 Datasheet (PDF)

1.1. 2sd1698.pdf Size:116K _nec

4.1. 2sd1692.pdf Size:98K _nec

DATA SHEET SILICON POWER TRANSISTOR 2SD1692 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FEATURES PACKAGE DRAWING (UNIT: mm) � High DC current gain due to Darlington connection � Large current capacity and low VCE(sat) � Large power dissipation TO-126 type power transistor � Complementary transistor: 2SB1149 ABSOLUTE MAXIMUM RATINGS (Ta = 25�C) Parameter Symbol Ratin

4.2. 2sd1693.pdf Size:151K _nec

 4.3. 2sd1695.pdf Size:104K _nec

DATA SHEET SILICON POWER TRANSISTOR 2SD1695 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1695 is a Darlington connection transistor and PACKAGE DRAWING (UNIT: mm) incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between the collector and base. This

4.4. 2sd1699.pdf Size:198K _nec

 4.5. 2sd1694.pdf Size:146K _nec

4.6. 2sd1691.pdf Size:114K _nec

DATA SHEET SILICON POWER TRANSISTOR 2SD1691 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCEY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) � Large current capacity and low VCE(sat): IC(DC) = 5.0 A, IC(pulse) = 8.0 A VCE(sat) = 0.1 V TYP. (@IC = 2.0 A, IB = 0.2 A) � Large power dissipation TO-126 type power transistor PT = 1.3 W (@Ta = 25�C), 20

4.7. 2sd1691.pdf Size:263K _utc

UNISONIC TECHNOLOGIES CO., LTD 2SD1691 NPN SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE 1 1 LARGE CURRENT TO-220F1 TO-220 ? FEATURES *High Power Dissipation *Complementary to 2SB1151 1 1 TO-126 TO-126C 1 TO - 252 ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2SD1691L-x-TA3-T 2SD1691G-x-TA3-T TO-22

4.8. 2sd1692.pdf Size:270K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1692 DESCRIPTION ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = 100V(min.) ·DC Current Gain— : hFE = 2000(Min.) @ IC= 1.5 A ·Complement to Type 2SB1149 APPLICATIONS ·Designed for general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER

4.9. 2sd1691.pdf Size:123K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1691 DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2SB1151 Ў¤ Low saturation voltage Ў¤ High total power dissipation:PT=1.3W Ў¤ Large current capability and wide SOA APPLICATIONS Ў¤ DC-DC converter Ў¤ Driver of solenoid or motor PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connect

4.10. st2sd1691t.pdf Size:350K _semtech

ST 2SD1691T NPN Silicon Epitaxial Power Transistor For Low-Frequencey Power Amplifiers and Mid-Speed Switching The transistor is subdivided into three groups, M, L and K, according to its DC-DC current gain. E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Symbol Value Unit Parameter VCBO 60 V Collector to Base Voltage VCEO 60 V Collector to Emitter

4.11. 2sd1699.pdf Size:1051K _kexin

SMD Type Transistors NPN Transistors 2SD1699 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=0.8A ● Collector Emitter Voltage VCEO=80V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage V

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