2SD1698 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD1698
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 10000
Package: TO92
2SD1698 Transistor Equivalent Substitute - Cross-Reference Search
2SD1698 Datasheet (PDF)
0.1. 2sd1698.pdf 
Size:116K _nec
8.1. 2sd1692.pdf Size:98K _nec
DATA SHEETSILICON POWER TRANSISTOR2SD1692NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FEATURES PACKAGE DRAWING (UNIT: mm) High DC current gain due to Darlington connection Large current capacity and low VCE(sat) Large power dissipation TO-126 type power transistor Complementary transistor: 2SB1149 ABSOLUTE MAXIMUM RATINGS (Ta = 25C) Parameter
8.2. 2sd1693.pdf Size:151K _nec
8.3. 2sd1695.pdf Size:104K _nec
DATA SHEETSILICON POWER TRANSISTOR2SD1695NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGThe 2SD1695 is a Darlington connection transistor and PACKAGE DRAWING (UNIT: mm)incorporates a dumper diode between the collector and emitter anda constant voltage diode and protection elements between thecollector and base. T
8.4. 2sd1699.pdf Size:198K _nec
8.5. 2sd1694.pdf Size:146K _nec
8.6. 2sd1691.pdf Size:114K _nec
DATA SHEETSILICON POWER TRANSISTOR2SD1691NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCEY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) Large current capacity and low VCE(sat): IC(DC) = 5.0 A, IC(pulse) = 8.0 A VCE(sat) = 0.1 V TYP. (@IC = 2.0 A, IB = 0.2 A) Large power dissipation TO-126 type power transistor PT = 1.3 W (@Ta = 25
8.7. 2sd1691.pdf Size:263K _utc
UNISONIC TECHNOLOGIES CO., LTD 2SD1691 NPN SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE 11LARGE CURRENT TO-220F1TO-220 FEATURES *High Power Dissipation *Complementary to 2SB1151 11TO-126 TO-126C1TO - 252 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2SD1691L-x-TA3-T 2SD1691G-x-TA3-
8.8. st2sd1691t.pdf Size:350K _semtech
ST 2SD1691T NPN Silicon Epitaxial Power Transistor For Low-Frequencey Power Amplifiers and Mid-Speed Switching The transistor is subdivided into three groups, M, L and K, according to its DC-DC current gain. ECBTO-126 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Symbol Value UnitParameter VCBO 60 VCollector to Base Voltage VCEO 60 VCollector to Emitter
8.9. 2sd1699.pdf Size:1051K _kexin
SMD Type TransistorsNPN Transistors2SD1699SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.8A Collector Emitter Voltage VCEO=80V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage V
8.10. 2sd1692.pdf Size:211K _inchange_semiconductor
isc Silicon NPN Darlington Power Transistor 2SD1692DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 100V(min.)CEO(SUS)DC Current Gain: h = 2000(Min.) @ I = 1.5 AFE CComplement to Type 2SB1149Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier applications.ABSOLUTE MAXI
8.11. 2sd1691.pdf Size:210K _inchange_semiconductor
isc Silicon NPN Power Transistor 2SD1691DESCRIPTIONHigh Collector Current -I = 5ACLow Collector Saturation Voltage: V = 0.3V(Max.)@ I = 2ACE(sat) CComplement to Type 2SB1151Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converter, or driver of solenoidor motor.ABSOLUTE MAXIMUM RATINGS(T =
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
