2SD1703 Datasheet. Specs and Replacement
Type Designator: 2SD1703
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 120 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO218
- BJT ⓘ Cross-Reference Search
2SD1703 datasheet
8.4. Size:93K panasonic
2sd1707.pdf 
Power Transistors 2SD1707 Silicon NPN epitaxial planar type Unit mm For power switching 15.0 0.3 5.0 0.2 11.0 0.2 (3.2) Complementary to 2SB1156 Features 3.2 0.1 Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC 2.0 0.2 2.0 0.1 Full-pack package which can be install... See More ⇒
8.5. Size:92K panasonic
2sd1705.pdf
Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit mm For power switching 15.0 0.3 5.0 0.2 11.0 0.2 (3.2) Complementary to 2SB1154 Features 3.2 0.1 Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC 2.0 0.2 2.0 0.1 Full-pack package which can be install... See More ⇒
8.7. Size:1053K kexin
2sd1702.pdf
SMD Type Transistors NPN Transistors 2SD1702 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.8A Collector Emitter Voltage VCEO=50V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VE... See More ⇒
8.8. Size:218K inchange semiconductor
2sd1707.pdf
isc Silicon NPN Power Transistor 2SD1707 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage- V = 0.5V(Max.)@ I = 8A CE(sat) C Complement to Type 2SB1156 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications ... See More ⇒
8.9. Size:215K inchange semiconductor
2sd1705.pdf
isc Silicon NPN Power Transistor 2SD1705 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage- V = 0.5V(Max.)@ I = 6A CE(sat) C Complement to Type 2SB1154 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications ... See More ⇒
8.10. Size:215K inchange semiconductor
2sd1709.pdf
isc Silicon NPN Power Transistor 2SD1709 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE... See More ⇒
8.11. Size:216K inchange semiconductor
2sd1706.pdf
isc Silicon NPN Power Transistor 2SD1706 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage- V = 0.5V(Max.)@ I = 7A CE(sat) C Complement to Type 2SB1155 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications ... See More ⇒
Detailed specifications: 2SD1697, 2SD1698, 2SD1699, 2SD17, 2SD170, 2SD1700, 2SD1701, 2SD1702, BD140, 2SD1704, 2SD1705, 2SD1706, 2SD1707, 2SD1708, 2SD1709, 2SD170A, 2SD171
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