2SD1706 Datasheet and Replacement

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isc Silicon NPN Power Transistor 2SD1706 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage- V = 0.5V(Max.)@ I = 7A CE(sat) C Complement to Type 2SB1155 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications ... See More ⇒

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Power Transistors 2SD1707 Silicon NPN epitaxial planar type Unit mm For power switching 15.0 0.3 5.0 0.2 11.0 0.2 (3.2) Complementary to 2SB1156 Features 3.2 0.1 Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC 2.0 0.2 2.0 0.1 Full-pack package which can be install... See More ⇒

Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit mm For power switching 15.0 0.3 5.0 0.2 11.0 0.2 (3.2) Complementary to 2SB1154 Features 3.2 0.1 Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC 2.0 0.2 2.0 0.1 Full-pack package which can be install... See More ⇒

SMD Type Transistors NPN Transistors 2SD1702 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.8A Collector Emitter Voltage VCEO=50V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VE... See More ⇒

isc Silicon NPN Power Transistor 2SD1707 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage- V = 0.5V(Max.)@ I = 8A CE(sat) C Complement to Type 2SB1156 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications ... See More ⇒

isc Silicon NPN Power Transistor 2SD1705 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage- V = 0.5V(Max.)@ I = 6A CE(sat) C Complement to Type 2SB1154 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications ... See More ⇒

isc Silicon NPN Power Transistor 2SD1709 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE... See More ⇒