2SD1786 Datasheet, Equivalent, Cross Reference Search

2SD1786 Transistor Equivalent Substitute - Cross-Reference Search

2SD1786 Datasheet (PDF)

4.1. 2sd1782kfra.pdf Size:934K _update

2SD1782KFRA 2SD1782K Transistors AEC-Q101 Qualified Power Transistor (80V, 0.5A) 2SD1782K 2SD1782KFRA External dimensions (Unit : mm) Features 1) Low VCE(sat). 2.9±0.2 VCE(sat) =0.2V(Typ.) 1.1+0.2 1.9±0.2 -0.1 (IC / IB=0.5 A / 50mA) 0.8±0.1 0.95 0.95 2) High VCEO,VCEO=80V (1) (2) 0~0.1 2SB1198KFRA 3) Complements the 2SB1198K. (3) +0.1 0.15-0.06 +0.1 0.4 -0.0

4.2. 2sd1781kfra.pdf Size:969K _update

2SD1781KFRA 2SD1781K Transistors AEC-Q101 Qualified Medium Power Transistor (32V, 0.8A) 2SD1781K 2SD1781KFRA External dimensions (Unit : mm) Features 1) Very Low VCE(sat). 2.9±0.2 VCE(sat) = 0.1V(Typ.) 1.1+0.2 1.9±0.2 -0.1 IC / IB= 500 A / 50mA 0.8±0.1 0.95 0.95 2) High current capacity in compact package. (1) (2) 0~0.1 3) Complements the 2SB1197K 2SB1197K. (3) +0

 4.3. 2sd1781kgp.pdf Size:221K _update

CHENMKO ENTERPRISE CO.,LTD 2SD1781KGP SURFACE MOUNT NPN Switching Transistor VOLTAGE 32 Volts CURRENT 0.8 Ampere APPLICATION * Telephone and proferssional communction equipment. * Other switching applications. FEATURE SOT-23 * Small surface mounting type. (SOT-23) * Corrector peak current (Max.=1500mA). * Suitable for high packing density. * Low voltage (Max.=32V) . * High satur

4.4. l2sd1781kqlt1g.pdf Size:118K _upd

LESHAN RADIO COMPANY, LTD. Medium Power Transistor L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series (32V, 0.8A) L2SD1781KQLT1G FFeatures 3 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 1 2) High current capacity in compact 2 package. 3) Complements the L2SB1197KXLT1G SOT-23 /TO-236AB 4) We declare that the material of product compliance with RoHS requireme

 4.5. 2sd1784.pdf Size:153K _toshiba

2SD1784 TOSHIBA Field Effect Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington) 2SD1784 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications • High DC current gain: hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C • Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Maximum Ratings (Ta =

4.6. 2sd1780.pdf Size:142K _nec

4.7. 2sd1781k.pdf Size:47K _rohm

2SD1781K Transistors Medium Power Transistor (32V, 0.8A) 2SD1781K External dimensions (Unit : mm) Features 1) Very Low VCE(sat). 2.9�0.2 VCE(sat) = 0.1V(Typ.) 1.1+0.2 1.9�0.2 -0.1 IC / IB= 500 A / 50mA 0.8�0.1 0.95 0.95 2) High current capacity in compact package. (1) (2) 0~0.1 3) Complements the 2SB1197K. (3) +0.1 0.15-0.06 +0.1 0.4 -0.05 Structure All terminals ha

4.8. 2sd1782.pdf Size:92K _rohm

Transistors Power Transistor (80V, 0.5A) 2SD1782K FFeatures FExternal dimensions (Units: mm) 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 0.5A / 50mA) 2) High VCEO, VCEO = 80V 3) Complements the 2SB1198K. FStructure Epitaxial planar type NPN silicon transistor FAbsolute maximum ratings (Ta = 25_C) (96-222-D93) 271 Transistors 2SD1782K FElectrical characteristics (Ta = 25_C)

4.9. 2sd1782k.pdf Size:75K _rohm

2SD1782K Transistors Power Transistor (80V, 0.5A) 2SD1782K External dimensions (Unit : mm) Features 1) Low VCE(sat). 2.9�0.2 VCE(sat) =0.2V(Typ.) 1.1+0.2 1.9�0.2 -0.1 (IC / IB=0.5 A / 50mA) 0.8�0.1 0.95 0.95 2) High VCEO, VCEO=80V (1) (2) 0~0.1 3) Complements the 2SB1198K. (3) +0.1 0.15-0.06 +0.1 0.4 -0.05 Structure All terminals have same dimensions (1) E

4.10. 2sd1782.pdf Size:84K _utc

UNISONIC TECHNOLOGIES CO., LTD 2SD1782 Preliminary NPN EPITAXIAL SILICON TRANSISTOR POWER NPN TRANSISTOR ? DESCRIPTION The UTC 2SD1782 is an NPN silicon transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high DC current gain, etc. ? FEATURES * High collector-emitter break

4.11. 2sd1781.pdf Size:72K _secos

2SD1781 0.8A, 40V NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES ? Very low VCE(sat).VCE(sat) < 0.4 V (Typ.) A (IC /IB = 500mA / 50mA) L ? Complements to 2SB1197 3 3 Top View C B 1 1 2 2 K E CLASSIFICATION OF hFE Product-Rank 2SD1781-Q 2SD1781-R D H J

4.12. 2sd1789.pdf Size:79K _jmnic

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1789 DESCRIPTION ·With ITO-220 package ·Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitt

4.13. 2sd1788.pdf Size:79K _jmnic

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1788 DESCRIPTION ·With ITO-220 package ·Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitt

4.14. 2sd1785.pdf Size:25K _sanken-ele

Equivalent C circuit B Darlington 2SD1785 (2.5k?)(200?) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1258) Application : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose Absolute maximum ratings (Ta=25�C) Electrical Characteristics (Ta=25�C) External Dimensions FM20(TO220F) Symbol 2SD1785 Unit Symbol Conditions 2SD1785 Unit �0.2 4.2

4.15. 2sd1789.pdf Size:117K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1789 DESCRIPTION Ў¤ With ITO-220 package Ў¤ Switching power transistor Ў¤ DARLINGTON PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base volt

4.16. 2sd1785.pdf Size:225K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1785 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 2V ·Complement to Type 2SB1258 APPLICATIONS ·Driver for solenoid, relay an

4.17. 2sd1788.pdf Size:117K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1788 DESCRIPTION Ў¤ With ITO-220 package Ў¤ Switching power transistor Ў¤ DARLINGTON PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg TOR NDU ICO E SEM ANG I

4.18. 2sd1781k sot-23-3l.pdf Size:214K _lge

2SD1781K SOT-23-3L Transistor(NPN) SOT-23-3L 1. BASE 2. EMITTER 2.92 0.35 3. COLLECTOR 1.17 Features 2.80 1.60 Low voltage High saturation current capability 0.15 1.90 MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO Collector-Emitter Voltage 32 V VEBO Emitter-B

4.19. l2sd1781krlt1g.pdf Size:117K _lrc

LESHAN RADIO COMPANY, LTD. Medium Power Transistor L2SD1781KQLT1G Series (32V, 0.8A) S-L2SD1781KQLT1G Series L2SD1781KQLT1G FFeatures 3 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) 1 (IC / IB = 500mA / 50mA) 2) High current capacity in compact 2 package. SOT-23 /TO-236AB 3) Complements the L2SB1197KXLT1G 4) We declare that the material of product compliance with RoHS requirem

4.20. 2sd1781.pdf Size:1002K _kexin

SMD Type Transistors NPN Transistors 2SD1781 (2SD1781K) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 ■ Features 3 ● Very Low VCE(sat). ● High current capacity in compact package. ● Complimentary to 2SB1197(2SB1197K) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit C

4.21. 2sd1782.pdf Size:335K _kexin

SMD Type Transistors NPN Transistors 2SD1782 SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=0.5A ● Collector Emitter Voltage VCEO=80V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collect

4.22. 2sd1784.pdf Size:1067K _kexin

SMD Type Transistors NPN Transistors 2SD1784 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=1.5A ● Collector Emitter Voltage VCEO=30V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VE

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