2SD1921 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD1921
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 250(typ) MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 82
Noise Figure, dB: -
Package: FTL
2SD1921 Transistor Equivalent Substitute - Cross-Reference Search
2SD1921 Datasheet (PDF)
2sd1922.pdf
2SD1922Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineTO-92MOD23ID1. Emitter2. Collector3. Base13212SD1922Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter voltage VCEO 25 VEmitter to base voltage VEBO 6VCollector current IC 0.8 ACollector peak current ic (peak)
2sd1923.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1923DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 2A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION
2sd1928.pdf
isc Silicon NPN Darlington Power Transistor 2SD1928DESCRIPTIONCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 4ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 4AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed switching industrial use.ABSOLUTE
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 3DD13009E
