All Transistors. 2SD2012 Datasheet

 

2SD2012 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD2012
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 9 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO220

 2SD2012 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD2012 Datasheet (PDF)

 ..1. Size:126K  st
2sd2012.pdf

2SD2012

 ..2. Size:126K  toshiba
2sd2012.pdf

2SD2012 2SD2012

2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications Unit: mm Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A) High power dissipation: PC = 25 W (Tc = 25C) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 60 VCollector-emitter voltage

 ..3. Size:949K  jiangsu
2sd2012.pdf

2SD2012 2SD2012

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate TransistorsTO 220F 2SD2012 TRANSISTOR (NPN)1. BASEFEATURES 2. COLLECTOR Audio frequency power amplifier applications High DC current gain3. EMITTER 12 Low saturation voltage 3 High power dissipation Equivalent Circuit 2SD2012=Device code Solid dot=Green moldinn compound de

 ..4. Size:209K  inchange semiconductor
2sd2012.pdf

2SD2012 2SD2012

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2012DESCRIPTIONHigh DC Current Gain-: h = 100 (Min)@ I = 0.5AFE CLow Saturation Voltage-: V = 1.0V (Max)CE(sat)High Power Dissipation: P = 25 W(Max)@ T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier

 8.1. Size:78K  panasonic
2sd2018.pdf

2SD2012 2SD2012

Power Transistors2SD2018Silicon NPN epitaxial planar type darlingtonFor low-frequency amplificationUnit: mm8.0+0.50.13.20.2 3.160.1 Features High forward current transfer ratio hFE Built-in 60 V Zener diode between base to collector Absolute Maximum Ratings Ta = 25CParameter Symbol Rating UnitCollector-base voltage (Emitter open) VCBO 60+25 V

 8.2. Size:32K  hitachi
2sd2019.pdf

2SD2012 2SD2012

2SD2019Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineTO-126 MOD231. EmitterID2. Collector3. Base115 k 0.5 k23(Typ) (Typ)12SD2019Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 150 VCollector to emitter voltage VCEO 80 VEmitter to base voltage VEBO 8VCollector current IC 1.5 A

 8.3. Size:72K  jmnic
2sd2015.pdf

2SD2012 2SD2012

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2015 DESCRIPTION With TO-220F package DARLINGTON APPLICATIONS Driver for solenoid Relay and motor General purpose PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT

 8.4. Size:21K  sanken-ele
2sd2016.pdf

2SD2012

CEquivalentcircuitBDarlington 2SD2016(2k) (200)ESilicon NPN Triple Diffused Planar TransistorApplication : Igniter, Relay and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SD2016 Unit Symbol Conditions 2SD2016 Unit0.24.20.210.1c0.52.8 AVCBO 200 V ICBO VCB=200V 10ma

 8.5. Size:26K  sanken-ele
2sd2015.pdf

2SD2012

Equivalent CcircuitBDarlington 2SD2015(3k) (500)ESilicon NPN Triple Diffused Planar TransistorApplication : Driver for Solenoid, Relay and Motor and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol Conditions 2SD2015Symbol 2SD2015 Unit Unit0.24.20.210.1c0.52.8ICBO VCB=150V

 8.6. Size:25K  sanken-ele
2sd2017.pdf

2SD2012

Equivalent CcircuitBDarlington 2SD2017(4k)ESilicon NPN Triple Diffused Planar TransistorApplication : Driver for Solenoid, Relay and Motor and General Purpose(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical Characteristics External Dimensions FM20(TO220F)Symbol 2SD2017 Symbol Conditions 2SD2017 UnitUnit0.24.20.210.1c0.52.8VCBO 300 ICBO VCB=300

 8.7. Size:26K  sanken-ele
2sd2014.pdf

2SD2012

Equivalent CcircuitBDarlington 2SD2014(3k) (200)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1257)Application : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SD2014 Symbol Conditions 2SD2014 Unit 4.2Uni

 8.8. Size:210K  inchange semiconductor
2sd2016.pdf

2SD2012 2SD2012

isc Silicon NPN Darlington Power Transistor 2SD2016DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 1ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 1A, V = 4VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIgniter, relay and

 8.9. Size:210K  inchange semiconductor
2sd2015.pdf

2SD2012 2SD2012

isc Silicon NPN Darlington Power Transistor 2SD2015DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 2ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 2A, V = 2VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for drive

 8.10. Size:193K  inchange semiconductor
2sd201.pdf

2SD2012 2SD2012

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD201DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Sustaining Voltage-: V = 60V(Min.)CEO(SUS)Low Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and switching application

 8.11. Size:209K  inchange semiconductor
2sd2017.pdf

2SD2012 2SD2012

isc Silicon NPN Darlington Power Transistor 2SD2017DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 250V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 2ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 2A, V = 2VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned of d

 8.12. Size:210K  inchange semiconductor
2sd2014.pdf

2SD2012 2SD2012

isc Silicon NPN Darlington Power Transistor 2SD2014DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 3A, V = 2VFE C CEComplement to Type 2SB1257Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLI

Datasheet: 2SD1999 , 2SD20 , 2SD200 , 2SD2000 , 2SD2001 , 2SD2002 , 2SD200A , 2SD201 , 2SB817 , 2SD2012G , 2SD2012Y , 2SD2014 , 2SD2015 , 2SD2016 , 2SD2017 , 2SD2018 , 2SD2019 .

 

 
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