All Transistors. 2SD2116 Datasheet

 

2SD2116 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD2116

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector Current |Ic max|: 0.7 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 10000

Noise Figure, dB: -

Package: SOT33

2SD2116 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD2116 Datasheet (PDF)

1.1. 2sd2116.pdf Size:74K _sanyo

2SD2116
2SD2116

Ordering number:EN3203 NPN Epitaxial Planar Silicon Transistor 2SD2116 General Driver Applications Features Package Dimensions Darlington connection. unit:mm High DC current gain. 2064A Large current capacity, wide ASO. [2SD2116] 2.5 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 : Emitter 2 : Collector 3 : Base 2.54 2.54 SANYO : NMP Specifications Absolute Maximum Ratings

4.1. 2sd2117.pdf Size:67K _sanyo

2SD2116
2SD2116

Ordering number:EN3204 NPN Epitaxial Planar Silicon Transistor 2SD2117 General Driver Applications Features Package Dimensions Darlington connection. unit:mm High DC current gain. 2064A Large current capacity, wide ASO. [2SD2117] 2.5 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 : Emitter 2 : Collector 3 : Base 2.54 2.54 SANYO : NMP Specifications Absolute Maximum Ratings

4.2. 2sd2114.pdf Size:124K _rohm

2SD2116
2SD2116

Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S FFeatures FExternal dimensions (Units: mm) 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) FStructure Epitaxial planar type NPN silicon transistor (96-232-C107) 232 Transistors 2SD2114K

 4.3. 2sd2114ks.pdf Size:157K _rohm

2SD2116
2SD2116

High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K ?Features ?Dimensions (Unit : mm) 1) High DC current gain. 2SD2114K 2.90.2 1.1+0.2 hFE = 1200 (Typ.) 1.90.2 -0.1 0.80.1 0.95 0.95 2) High emitter-base voltage. (1) (2) VEBO =12V (Min.) 0?0.1 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (3) (IC / IB = 500mA / 20mA) +0.1 0.15-0.06 +0.1 0.4 -0.05 All ter

4.4. 2sd2098 2sd2118 2sd2097.pdf Size:91K _rohm

2SD2116
2SD2116

2SD2098 / 2SD2118 / 2SD2097 Transistors Low VCE(sat) transistor (strobe flash) 2SD2098 / 2SD2118 / 2SD2097 External dimensions (Units : mm) Features 1) Low VCE(sat). 2SD2098 +0.2 VCE(sat) = 0.25V (Typ.) 4.5 -0.1 +0.2 1.5 1.60.1 -0.1 (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326. (1) (2) (3) 0.4+0.1 -0.05 0.4

 4.5. 2sd2114k-s.pdf Size:89K _rohm

2SD2116
2SD2116

2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S External dimensions (Unit : mm) Features 1) High DC current gain. 2SD2114K 2.90.2 1.1+0.2 1.90.2 -0.1 hFE = 1200 (Typ.) 0.80.1 0.95 0.95 2) High emitter-base voltage. (1) (2) 0?0.1 VEBO =12V (Min.) 3) Low VCE (sat). (3) +0.1 VCE (sat) = 0.18V (Typ.) 0.

4.6. 2sd2115.pdf Size:31K _hitachi

2SD2116
2SD2116

2SD2115(L)/(S) Silicon NPN Epitaxial Planar Application Low frequency power amplifier Outline DPAK 4 4 1 2 1. Base 3 2. Collector 3. Emitter S Type 12 4. Collector 3 L Type Absolute Maximum Ratings (Ta = 25C) Item Symbol Rating Unit Collector to base voltage VCBO 150 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 5V Collector current IC 2A Collector

4.7. 2sd2114.pdf Size:250K _secos

2SD2116
2SD2116

2SD2114 0.5A , 25V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE High DC Current Gain. A L High Emitter-Base Voltage. VEBO=12V (Min.) 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 2 K E Product-Rank 2SD2114-V 2SD2114-W Range 820~1800 1200~2700 D Marking BBV BBW

4.8. 2sd2118.pdf Size:70K _secos

2SD2116

2SD2118 5A , 50V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES D-Pack (TO-252) Low VCE(sat). VCE(sat) = 0.25V(Typ.) (IC/IB = 4A / 0.1A) Excellent DC Current Gain Characteristics CLASSIFICATION OF hFE Product-Rank 2SD2118-Q 2SD2118-R A C B D Range 120~270 180~390 G E P

4.9. 2sd2110.pdf Size:277K _inchange_semiconductor

2SD2116
2SD2116

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2110 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A ·High DC Current Gain : hFE= 1000(Min) @ IC= 2A, VCE= 3V APPLICATIONS ·Designed for low frequency power amplifier applications ABS

4.10. 2sd211.pdf Size:127K _inchange_semiconductor

2SD2116
2SD2116

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD211 DESCRIPTION ·With TO-3 package ·Large current capability ·Wide area of safe operation APPLICATIONS ·For power amplifier and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?)

4.11. 2sd2111.pdf Size:260K _inchange_semiconductor

2SD2116
2SD2116

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2111 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 1.5A ·High DC Current Gain : hFE= 1000(Min) @ IC= 1.5A, VCE= 3V APPLICATIONS ·Designed for low frequency power amplifier applications

4.12. 2sd2112.pdf Size:229K _inchange_semiconductor

2SD2116
2SD2116

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2112 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 1000(Min) @ IC= 3A, VCE= 3V APPLICATIONS ·Designed for low frequency power amplifier applications AB

4.13. 2sd2113.pdf Size:228K _inchange_semiconductor

2SD2116
2SD2116

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2113 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 1.5A ·High DC Current Gain : hFE= 1000(Min) @ IC= 1.5A, VCE= 3V APPLICATIONS ·Designed for low frequency power amplifier applications

4.14. 2sd2114.pdf Size:883K _htsemi

2SD2116
2SD2116

2SD2114 TRANSISTOR (NPN) FEATURES SOT-23 High DC current gain. High emitter-base voltage. Low VCE (sat). MARKING: BBV,BBW 1. BASE 2.EMITTER MAXIMUM RATINGS (TA=25? unless otherwise noted) 3.COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 12 V IC Collector Current -Continuous 0.5

4.15. 2sd2114 sot-23.pdf Size:229K _lge

2SD2116
2SD2116

2SD2114 SOT-23 Transistor(NPN) 1. BASE SOT-23 2.EMITTER 3.COLLECTOR Features High DC current gain. hFE = 1200 (Typ.) High emitter-base voltage. VEBO =12V (Min.) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC/IB=500mA / 20mA) MARKING: BBV,BBW MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-B

4.16. 2sd2118.pdf Size:210K _lge

2SD2116
2SD2116

2SD2118(NPN) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Low VCE(sat). VCE(sat) = 0.25V (Typ.)(IC/IB = 4A / 0.1A) Excellent DC current gain characteristics. TO-252-2L MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Volt

4.17. l2sd2114kvlt1g.pdf Size:106K _lrc

2SD2116
2SD2116

LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114KVLT1G Series Features S-L2SD2114KVLT1G Series 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. 3 VEBO =12V (Min.) 3) Low V CE (sat). 1 VCE (sat) = 0.18V (Typ.) 2 (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements. SOT– 2

4.18. l2sd2114kwlt1g.pdf Size:105K _lrc

2SD2116
2SD2116

LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114KVLT1G Series Features S-L2SD2114KVLT1G Series 1) High DC current gain. hFE = 1200 (Typ.) 3 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). 1 VCE (sat) = 0.18V (Typ.) 2 (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements. SOT– 23 (TO

4.19. 2sd2114.pdf Size:784K _kexin

2SD2116
2SD2116

SMD Type Transistors NPN Transistors 2SD2114 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=500mA Collector ● Collector Emitter Voltage VCEO=20V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 Base 1.Base 2.Emitter Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Ba

Datasheet: 2SC431 , 2SC4310 , 2SC4311 , 2SC4312 , 2SC4313 , 2SC4314 , 2SC4315 , 2SC4316 , BC147 , 2SC4318 , 2SC432 , 2SC4320 , 2SC4321 , 2SC4322 , 2SC4323 , 2SC4324 , 2SC4325 .

 
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