2SD2401P Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD2401P
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 55 MHz
Collector Capacitance (Cc): 95 pF
Forward Current Transfer Ratio (hFE), MIN: 6500
Noise Figure, dB: -
Package: MT200
2SD2401P Transistor Equivalent Substitute - Cross-Reference Search
2SD2401P Datasheet (PDF)
2sd2401.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2401 DESCRIPTION With MT-200 package Complement to type 2SB1570 DARLINGTON APPLICATIONS Audio, Series Regulator and General Purpose PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (MT-200) and symbol Absolute maximum r
2sd2401.pdf
Equivalent circuit CBDarlington 2SD2401(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1570)Application : Audio, Series Regulator and General PurposeExternal Dimensions MT-200 Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SD2401 Symbol Conditions 2SD2401 UnitUnit0.26.00.336.4VCBO 160 ICBO VCB=160V
2sd2401.pdf
isc Silicon NPN Darlington Power Transistor 2SD2401DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 7A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 7A, I = 7mA)CE(sat) C BComplement to Type 2SB1570Minimum Lot-to-Lot variations for robust deviceperformance and reliable op
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
