2SD289 Datasheet. Specs and Replacement
Type Designator: 2SD289
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 35 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO220
2SD289 Substitution
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2SD289 datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD289 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 55V(Min) (BR)CEO Collector Power Dissipation- P = 25W(Max)@ T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power regulator, low frequency high power amplifier applications. ABSOLU... See More ⇒
2SD288 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER * TO-220 ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 8 0 V Collector-Emitter Voltage VCEO 55 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 3 A Collector Dissipation (Tc=25oC) PC 20 W o Junction Temperature Tj 150 C o C Storage Temperat... See More ⇒
isc Silicon NPN Power Transistor 2SD288 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 55V(Min) (BR)CEO Collector Power Dissipation- P = 25W(Max)@ T = 25 C C APPLICATIONS Designed for power regulator, low frequency high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 80 V CBO V Collector-E... See More ⇒
Detailed specifications: 2SD287, 2SD287A, 2SD287B, 2SD287C, 2SD288, 2SD288O, 2SD288R, 2SD288Y, S8550, 2SD29, 2SD290, 2SD291, 2SD291A, 2SD292, 2SD292A, 2SD293, 2SD294
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