2SD313E Datasheet and Replacement
Type Designator: 2SD313E
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 130 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO220
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2SD313E Datasheet (PDF)
2sd313.pdf

UNISONIC TECHNOLOGIES CO., LTD 2SD313 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 2SD313 is designed for use in general purpose amplifier and switching applications. ORDERING INFORMATION Ordering Number Pin AssignmentPackage Packing Lead Free Halogen Free 1 2 3 2SD313L-x-TA3-T 2SD313G-x-TA3-T TO-220 B C E Tube2SD313L-x-TF3-T 2SD313G-x-
2sd313.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SD313 TRANSISTOR (NPN)TO-220-3L 1. BASEFEATURES 2. COLLECTOR Low Collector-Emitter Saturation VoltageVce(sat)=1V(MAX)@IC=2A,IB=0.2A3. EMITTER DC Current Gain hFE=40~320@IC=1A Complementray to PNP 2SB507 Equivalent Circuit 2SD313=Device code Solid dot=Green moldinn com
2sd313.pdf

2SD313(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21FeaturesLow Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A DC Current Gain hFE=40~320@IC=1A Complementray to PNP 2SB507 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltag
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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