2SD325E Specs and Replacement
Type Designator: 2SD325E
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 7 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 140 °C
Electrical Characteristics
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO220
2SD325E Substitution
- BJT ⓘ Cross-Reference Search
2SD325E datasheet
3DA325(2SD325) NPN PCM TC=25 1.75 W ICM 1.5 A Tjm 150 Tstg -55 150 VCE=10V Rth 71 /W IC=0.3A V(BR)CBO ICB=1mA 35 V V(BR)CEO ICE=1mA 35 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 0.1 A IEBO VCE=5.0V 1.0 A VBEsat 1.5 IC=1.5A V IB... See More ⇒
isc Silicon NPN Power Transistor 2SD325 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 35V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 1.5A CE(sat) C Complement to Type 2SB511 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. Rec... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD320 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR) CEO Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage- V )= 2.0V(Max)@ I = 2A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose... See More ⇒
Detailed specifications: 2SD320, 2SD321, 2SD322, 2SD323, 2SD324, 2SD325, 2SD325C, 2SD325D, 431, 2SD325F, 2SD326, 2SD327, 2SD328, 2SD329, 2SD33, 2SD330, 2SD330C
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