All Transistors. 2SD346 Datasheet

 

2SD346 Datasheet and Replacement


   Type Designator: 2SD346
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO220

 2SD346 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD346 Datasheet (PDF)

 9.1. Size:188K  inchange semiconductor
 2sd343.pdf pdf_icon

2SD346

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD343 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.6V(Max) @I = 2.0A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose appli... See More ⇒

 9.2. Size:180K  inchange semiconductor
 2sd348.pdf pdf_icon

2SD346

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD348 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers and switching appl... See More ⇒

 9.3. Size:199K  inchange semiconductor
 2sd347.pdf pdf_icon

2SD346

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD347 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 3.0A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier a... See More ⇒

 9.4. Size:188K  inchange semiconductor
 2sd345.pdf pdf_icon

2SD346

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD345 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 55V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.6V(Max) @I = 2.0A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose appli... See More ⇒

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Datasheet: 2SD340-1 , 2SD340-2 , 2SD341 , 2SD341H , 2SD342 , 2SD343 , 2SD344 , 2SD345 , 13009 , 2SD347 , 2SD348 , 2SD349 , 2SD35 , 2SD350 , 2SD350A , 2SD351 , 2SD352 .

History: RN2108MFV | MJD42CT4G | GT703B | 2SC3777D | 2SC3790D | RN2110 | RN1973FS

Keywords - 2SD346 transistor datasheet

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