All Transistors. 2SD358 Datasheet

 

2SD358 Transistor. Datasheet pdf. Equivalent

Type Designator: 2SD358

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 130 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 35 MHz

Forward Current Transfer Ratio (hFE), MIN: 55

Noise Figure, dB: -

Package: TO220

2SD358 Transistor Equivalent Substitute - Cross-Reference Search

2SD358 Datasheet (PDF)

5.1. 2sd356.pdf Size:43K _no

2SD358

5.2. 2sd355.pdf Size:30K _no

2SD358

5.3. 2sd352.pdf Size:42K _no

2SD358

5.4. 2sd359.pdf Size:37K _no

2SD358

5.5. 2sd357.pdf Size:266K _inchange_semiconductor

2SD358
2SD358

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD357 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·Complement to Type 2SB527 APPLICATIONS ·Designed for AF high power dirver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO

5.6. 2sd350a.pdf Size:147K _inchange_semiconductor

2SD358
2SD358

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD350A DESCRIPTION · ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·For color TV horizontal deflection output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER COND

Datasheet: 2SD350 , 2SD350A , 2SD351 , 2SD352 , 2SD353 , 2SD355 , 2SD356 , 2SD357 , 2N4401 , 2SD359 , 2SD36 , 2SD360 , 2SD361 , 2SD362 , 2SD362N , 2SD362O , 2SD362R .

 


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