2SD363 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD363
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
2SD363 Transistor Equivalent Substitute - Cross-Reference Search
2SD363 Datasheet (PDF)
2sd363.pdf
isc Silicon NPN Power Transistor 2SD363DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector Power Dissipation-: P = 40W(Max)@ T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
2sd365.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD365DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 1.0V(Max) @I = 2.0ACE(sat) CComplement to Type 2SB512Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier appl
2sd362.pdf
isc Silicon NPN Power Transistor 2SD362DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 70V(Min)(BR)CEOCollector Power Dissipation-: P = 40W(Max)@ T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
