2SD363A Datasheet and Replacement
Type Designator: 2SD363A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
2SD363A Transistor Equivalent Substitute - Cross-Reference Search
2SD363A Datasheet (PDF)
2sd363.pdf
isc Silicon NPN Power Transistor 2SD363 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Collector Power Dissipation- P = 40W(Max)@ T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL
2sd365.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD365 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector Saturation Voltage- V = 1.0V(Max) @I = 2.0A CE(sat) C Complement to Type 2SB512 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier appl
2sd362.pdf
isc Silicon NPN Power Transistor 2SD362 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 70V(Min) (BR)CEO Collector Power Dissipation- P = 40W(Max)@ T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P
Datasheet: 2SD36 , 2SD360 , 2SD361 , 2SD362 , 2SD362N , 2SD362O , 2SD362R , 2SD363 , 8050 , 2SD363O , 2SD363R , 2SD363Y , 2SD364 , 2SD365 , 2SD365A , 2SD366 , 2SD366A .
History: 2SD357
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History: 2SD357
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