2SD367 Datasheet. Specs and Replacement

Type Designator: 2SD367  📄📄 

Material of Transistor: Ge

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 85 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 46

Noise Figure, dB: -

Package: TO1

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2SD367 datasheet

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2SD367

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 9.2. Size:212K  inchange semiconductor

 2sd363.pdf pdf_icon

2SD367

isc Silicon NPN Power Transistor 2SD363 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Collector Power Dissipation- P = 40W(Max)@ T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ... See More ⇒

 9.3. Size:210K  inchange semiconductor

 2sd365.pdf pdf_icon

2SD367

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD365 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector Saturation Voltage- V = 1.0V(Max) @I = 2.0A CE(sat) C Complement to Type 2SB512 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier appl... See More ⇒

 9.4. Size:211K  inchange semiconductor

 2sd362.pdf pdf_icon

2SD367

isc Silicon NPN Power Transistor 2SD362 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 70V(Min) (BR)CEO Collector Power Dissipation- P = 40W(Max)@ T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒

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Detailed specifications: 2SD363O, 2SD363R, 2SD363Y, 2SD364, 2SD365, 2SD365A, 2SD366, 2SD366A, 9014, 2SD368, 2SD369, 2SD37, 2SD370, 2SD371, 2SD372, 2SD373, 2SD373A

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