2SD376 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD376
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO3
2SD376 Transistor Equivalent Substitute - Cross-Reference Search
2SD376 Datasheet (PDF)
2sd371.pdf
isc Silicon NPN Power Transistors 2SD371DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh Power Dissipation-: P = 50W(Max)@T =25C CComplement to Type 2SB531Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
2sd375.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD375DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V (Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in clocked voltage converters andswitching applications.ABSOLUTE MAXIMU
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
