2SD377 Specs and Replacement
Type Designator: 2SD377
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3
2SD377 Substitution
- BJT ⓘ Cross-Reference Search
2SD377 datasheet
isc Silicon NPN Power Transistors 2SD371 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High Power Dissipation- P = 50W(Max)@T =25 C C Complement to Type 2SB531 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD375 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V (Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in clocked voltage converters and switching applications. ABSOLUTE MAXIMU... See More ⇒
Detailed specifications: 2SD371 , 2SD372 , 2SD373 , 2SD373A , 2SD374 , 2SD375 , 2SD376 , 2SD376A , 2SC5198 , 2SD378 , 2SD379 , 2SD38 , 2SD380 , 2SD380A , 2SD381 , 2SD382 , 2SD383 .
Keywords - 2SD377 pdf specs
2SD377 cross reference
2SD377 equivalent finder
2SD377 pdf lookup
2SD377 substitution
2SD377 replacement
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y
Popular searches
d2390 transistor | 2n5087 equivalent | tip147 datasheet | 2n4124 | mj15022 | toshiba c5198 | irf520n datasheet | tip107

