All Transistors. 2SD378 Datasheet

 

2SD378 Datasheet and Replacement


   Type Designator: 2SD378
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TO39

 2SD378 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD378 Datasheet (PDF)

 9.1. Size:42K  no
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2SD378

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 9.2. Size:209K  inchange semiconductor
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2SD378

isc Silicon NPN Power Transistors 2SD371 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High Power Dissipation- P = 50W(Max)@T =25 C C Complement to Type 2SB531 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO... See More ⇒

 9.3. Size:185K  inchange semiconductor
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2SD378

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD375 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V (Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in clocked voltage converters and switching applications. ABSOLUTE MAXIMU... See More ⇒

Datasheet: 2SD372 , 2SD373 , 2SD373A , 2SD374 , 2SD375 , 2SD376 , 2SD376A , 2SD377 , NJW0281G , 2SD379 , 2SD38 , 2SD380 , 2SD380A , 2SD381 , 2SD382 , 2SD383 , 2SD384 .

History: RN2108MFV | HA7521 | GT806D | 2SC3779 | GT125E | MJD44H11G | 2SC3504F

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