2SD380A Datasheet and Replacement
Type Designator: 2SD380A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50
W
Maximum Collector-Base Voltage |Vcb|: 1500
V
Maximum Collector-Emitter Voltage |Vce|: 650
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 13
A
Max. Operating Junction Temperature (Tj): 135
°C
Forward Current Transfer Ratio (hFE), MIN: 7.5
Noise Figure, dB: -
Package:
TO3
2SD380A Transistor Equivalent Substitute - Cross-Reference Search
2SD380A Datasheet (PDF)
8.2. Size:202K inchange semiconductor
2sd380.pdf 

isc Silicon NPN Power Transistor 2SD380 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage ... See More ⇒
9.3. Size:69K wingshing
2sd389.pdf 

2SD389 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SB507 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base voltage VEBO 7 V Collector Current (DC) IC 4 A Collector Dissipation (Tc=25 PC 30 W Junction... See More ⇒
9.4. Size:212K inchange semiconductor
2sd389.pdf 

isc Silicon NPN Power Transistor 2SD389 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Wide Area of Safe Operation High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒
9.5. Size:212K inchange semiconductor
2sd386.pdf 

isc Silicon NPN Power Transistor 2SD386 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 1.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ... See More ⇒
9.6. Size:191K inchange semiconductor
2sd382.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD382 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min.) (BR)CEO Complement to Type 2SB537 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier, low speed switching. Suitable for driver of 60 100 watts audio amplifier. ABSOLUTE... See More ⇒
9.7. Size:125K inchange semiconductor
2sd386 2sd386a.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD386 2SD386A DESCRIPTION With TO-220C package High voltage VCBO=200V(min) APPLICATIONS For TV vertical deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALU... See More ⇒
9.9. Size:184K inchange semiconductor
2sd388.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD388 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V (Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T ... See More ⇒
Datasheet: 2SD375
, 2SD376
, 2SD376A
, 2SD377
, 2SD378
, 2SD379
, 2SD38
, 2SD380
, BC549
, 2SD381
, 2SD382
, 2SD383
, 2SD384
, 2SD385
, 2SD386
, 2SD386A
, 2SD387
.
History: GT806A
| K2118
| 2SA776A
| JC556B
| 2SA811AC15
| 2SC3468E
| RN1710
Keywords - 2SD380A transistor datasheet
2SD380A cross reference
2SD380A equivalent finder
2SD380A lookup
2SD380A substitution
2SD380A replacement