2SD412 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD412
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: TO3
2SD412 Transistor Equivalent Substitute - Cross-Reference Search
2SD412 Datasheet (PDF)
2sb548 2sb549 2sd414 2sd415.pdf
DATA SHEETSILICON POWER TRANSISTOR2SB548, 549/2SD414, 415PNP/NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERSFEATURES PACKAGE DRAWING (UNIT: mm) Ideal for audio amplifier drivers with 30 W to 50 W output High voltage Available for small mount spaces due to small and thin package Easy to be attached to radiatorsABSOLUTE MAXIMUM RATINGS (Ta = 25
2sd414.pdf
isc Silicon NPN Power Transistor 2SD414DESCRIPTIONWith TO-126packagingExcellent linearity of hFELow collector-to-emitter saturation voltageFast switching speedComplementary to 2SB548Minimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSRelay drivers, high-speed inverters , converters andOther general high current swit
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
