2SD419 Specs and Replacement
Type Designator: 2SD419
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 700
Package: TO66
2SD419 Substitution
- BJT ⓘ Cross-Reference Search
2SD419 datasheet
2sb548 2sb549 2sd414 2sd415.pdf 
DATA SHEET SILICON POWER TRANSISTOR 2SB548, 549/2SD414, 415 PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES PACKAGE DRAWING (UNIT mm) Ideal for audio amplifier drivers with 30 W to 50 W output High voltage Available for small mount spaces due to small and thin package Easy to be attached to radiators ABSOLUTE MAXIMUM RATINGS (Ta = 25 ... See More ⇒
isc Silicon NPN Power Transistor 2SD414 DESCRIPTION With TO-126packaging Excellent linearity of h FE Low collector-to-emitter saturation voltage Fast switching speed Complementary to 2SB548 Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Relay drivers, high-speed inverters , converters and Other general high current swit... See More ⇒
Detailed specifications: 2SD411, 2SD412, 2SD413, 2SD414, 2SD415, 2SD416, 2SD417, 2SD418, TIP42C, 2SD420, 2SD421, 2SD422, 2SD423, 2SD424, 2SD425, 2SD426, 2SD427
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