2SD470B PDF and Equivalents Search

 8.1. Size:186K  inchange semiconductor

 2sd470.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD470 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min.) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM... See More ⇒

 9.1. Size:86K  1

 2sd474k.pdf

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 9.2. Size:173K  nec

 2sd471.pdf

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 9.3. Size:32K  hitachi

 2sd476.pdf

2SD476(K), 2SD476A(K) Silicon NPN Triple Diffused Application Power switching complementary pair with 2SB566(K) and 2SB566A(K) Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SD476(K) 2SD476A(K) Unit Collector to base voltage VCBO 70 70 V Collector to emitter voltage VCEO 50 60 V Emitter to base voltage... See More ⇒

 9.4. Size:79K  microelectronics

 2sd471 2sb564.pdf

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 9.5. Size:208K  inchange semiconductor

 2sd476n.pdf

isc Silicon NPN Power Transistors 2SD476N DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@ I =2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 50V (Min) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA... See More ⇒

 9.6. Size:150K  inchange semiconductor

 2sd476 2sd476a.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD476 2SD476A DESCRIPTION With TO-220C package Complement to type 2SB566/566A APPLICATIONS For low frequency power amplifier power switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMET... See More ⇒

 9.7. Size:184K  inchange semiconductor

 2sd473.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD473 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max.)@ I = 10A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and... See More ⇒

 9.8. Size:212K  inchange semiconductor

 2sd478.pdf

isc Silicon NPN Power Transistor 2SD478 DESCRIPTION Collector Power Dissipation P = 30W C Collector-Emitter Breakdown Voltage- V = 150V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Co... See More ⇒