2SD517 Specs and Replacement
Type Designator: 2SD517
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 16 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 700 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 130 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 3
Package: TO3
2SD517 Substitution
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2SD517 datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD517 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒
Detailed specifications: 2SD51, 2SD510, 2SD511, 2SD512, 2SD513, 2SD514, 2SD515, 2SD516, MJE340, 2SD518, 2SD519, 2SD51A, 2SD52, 2SD520, 2SD521, 2SD522, 2SD523
Keywords - 2SD517 pdf specs
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History: BU724 | 2SC1757
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