2SD519 Specs and Replacement
Type Designator: 2SD519
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO3
2SD519 Substitution
- BJT ⓘ Cross-Reference Search
2SD519 datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD517 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒
Detailed specifications: 2SD511, 2SD512, 2SD513, 2SD514, 2SD515, 2SD516, 2SD517, 2SD518, BD335, 2SD51A, 2SD52, 2SD520, 2SD521, 2SD522, 2SD523, 2SD524, 2SD525
Keywords - 2SD519 pdf specs
2SD519 cross reference
2SD519 equivalent finder
2SD519 pdf lookup
2SD519 substitution
2SD519 replacement
