All Transistors. 2SD526Y Datasheet

 

2SD526Y Datasheet and Replacement


   Type Designator: 2SD526Y
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Collector Capacitance (Cc): 90 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO220
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2SD526Y Datasheet (PDF)

 8.1. Size:186K  toshiba
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2SD526Y

 8.2. Size:118K  mospec
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2SD526Y

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 8.3. Size:531K  semtech
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2SD526Y

ST 2SD526 NPN Epitaxial Silicon Power Transistor for power amplifier applications TO-220 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit80 VCollector Base Voltage VCBO 80 VCollector Emitter Voltage VCEO 5 VEmitter Base Voltage VEBO 4 ACollector Current IC 0.4 ABase Current IB OPower Dissipation (Tc = 25 C) PC 30 WOJunctio

 8.4. Size:167K  inchange semiconductor
 2sd526.pdf pdf_icon

2SD526Y

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD526 DESCRIPTION With TO-220C package Complement to type 2SB596 Good linearity of hFE APPLICATIONS Power amplifier applications Recommend for 2025W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 E

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: NKT125 | 2S11 | TA7530 | DWC307

Keywords - 2SD526Y transistor datasheet

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 2SD526Y equivalent finder
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