2SD526Y Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD526Y
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Collector Capacitance (Cc): 90 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO220
2SD526Y Transistor Equivalent Substitute - Cross-Reference Search
2SD526Y Datasheet (PDF)
st2sd526.pdf
ST 2SD526 NPN Epitaxial Silicon Power Transistor for power amplifier applications TO-220 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit80 VCollector Base Voltage VCBO 80 VCollector Emitter Voltage VCEO 5 VEmitter Base Voltage VEBO 4 ACollector Current IC 0.4 ABase Current IB OPower Dissipation (Tc = 25 C) PC 30 WOJunctio
2sd526.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD526 DESCRIPTION With TO-220C package Complement to type 2SB596 Good linearity of hFE APPLICATIONS Power amplifier applications Recommend for 2025W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 E
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: NKT241
