2SD540 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD540
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 12 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO3A
2SD540 Transistor Equivalent Substitute - Cross-Reference Search
2SD540 Datasheet (PDF)
2sd546.pdf
isc Silicon NPN Power Transistor 2SD546DESCRIPTIONContinuous Collector Current-I = 1ACPower Dissipation-P =30W @T = 25D CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 800 VCBOV Collector-Emitter Voltage 500 VCEOV Emitter-Base Voltage
2sd544.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD544DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 90V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max.) @ I = 4.0ACE(sat) CWith TO-220C PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power ampli
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
