2SD547 Specs and Replacement

Type Designator: 2SD547

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 400 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 450 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 50 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 150

Noise Figure, dB: -

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2SD547 datasheet

 9.1. Size:45K  sanyo

 2sd545.pdf pdf_icon

2SD547

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 9.2. Size:204K  inchange semiconductor

 2sd546.pdf pdf_icon

2SD547

isc Silicon NPN Power Transistor 2SD546 DESCRIPTION Continuous Collector Current-I = 1A C Power Dissipation-P =30W @T = 25 D C Minimum Lot-to-Lot variations for robust device performance and reliable operation . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 800 V CBO V Collector-Emitter Voltage 500 V CEO V Emitter-Base Voltage... See More ⇒

 9.3. Size:201K  inchange semiconductor

 2sd544.pdf pdf_icon

2SD547

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD544 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 90V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max.) @ I = 4.0A CE(sat) C With TO-220C Package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power ampli... See More ⇒

Detailed specifications: 2SD544-1, 2SD544-2, 2SD545, 2SD545D, 2SD545E, 2SD545F, 2SD545G, 2SD546, MJE350, 2SD548, 2SD549, 2SD55, 2SD550, 2SD551, 2SD552, 2SD553, 2SD553O

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