2SD555 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD555
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO3
2SD555 Transistor Equivalent Substitute - Cross-Reference Search
2SD555 Datasheet (PDF)
2sd555.pdf
isc Silicon NPN Power Transistor 2SD555DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V (Min)(BR)CEOHigh Power DissipationComplement to Type 2SB600Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed, high current and high powerapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
2sd557.pdf
isc Silicon NPN Power Transistor 2SD557DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = 140V(Min.)(BR)CEOHigh Collector Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
2sd553.pdf
isc Silicon NPN Power Transistor 2SD553DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V(Max) @I = 4ACE(sat) CComplement to Type 2SB553Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applications.Power amplifier applicati
2sd552.pdf
isc Silicon NPN Power Transistor 2SD552DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 180V (Min)(BR)CEOHigh Power DissipationComplement to Type 2SB552Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier, power switching applications.DC-DC converter and regulator applications.ABSOLUTE MAXIMUM RATING
2sd551.pdf
isc Silicon NPN Power Transistor 2SD551DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = 150V(Min.)(BR)CEOComplement to Type 2SB681Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor AF power amplifier applications.Recommended for use in output stage of 80 watts poweramplifier .ABSOLUTE
2sd554.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD554DESCRIPTIONContunuous Collector Current-I = 2ACPower Dissipation-P =30W @T = 25D CCollector-Emitter Saturation Voltage-: V )= 2.0 V(Max)@ I = 1ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching and linear amplifi
2sd556.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD556DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 110V (Min)(BR)CEOWide Area of Safe OperationHigh PowerHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power AF amplifier applications.ABSOLUTE MAXIMUM RATINGS(
2sd550.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD550DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage: V = 0.8V(Max)@I = 5ACE(sat) CWith TO-66 PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching ap
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
