2SD56 Specs and Replacement
Type Designator: 2SD56
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 220 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 18 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO66
2SD56 Substitution
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2SD56 datasheet
DATA SHEET SILICON POWER TRANSISTOR 2SD560 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD560 is a mold power transistor developed for low- ORDERING INFORMATION frequency power amplifiers and low-speed switching. This transistor is Ordering Name Package ideal for direct driving from the IC output of devices such... See More ⇒
isc Silicon NPN Power Transistor 2SD568 DESCRIPTION High Collector Current I = 7A C Low Collector Saturation Voltage V = 0.5V(Max)@I = 5A CE(sat) C Complement to Type 2SB707 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power amplifiers and low-speed switching applications. ABSOLUTE MAXIMUM R... See More ⇒
isc Silicon NPN Darlington Power Transistor 2SD560 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) High DC Current Gain h = 2000(Min) @I = 3.0A FE C Low Saturation Voltage Complement to Type 2SB601 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers and l... See More ⇒
Detailed specifications: 2SD553O, 2SD553Y, 2SD554, 2SD555, 2SD556, 2SD557, 2SD558, 2SD55A, 2N5551, 2SD560, 2SD560O, 2SD560R, 2SD560Y, 2SD565, 2SD568, 2SD568O, 2SD568R
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