All Transistors. 2SD560Y Datasheet

 

2SD560Y Datasheet and Replacement


   Type Designator: 2SD560Y
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10000
   Noise Figure, dB: -
   Package: TO220
 

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2SD560Y Datasheet (PDF)

 8.1. Size:90K  nec
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2SD560Y

DATA SHEETSILICON POWER TRANSISTOR2SD560NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGThe 2SD560 is a mold power transistor developed for low- ORDERING INFORMATIONfrequency power amplifiers and low-speed switching. This transistor isOrdering Name Packageideal for direct driving from the IC output of devices such

 8.2. Size:209K  fuji
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2SD560Y

 8.3. Size:209K  inchange semiconductor
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2SD560Y

isc Silicon NPN Darlington Power Transistor 2SD560DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)High DC Current Gain: h = 2000(Min) @I = 3.0AFE CLow Saturation VoltageComplement to Type 2SB601Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers and l

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Datasheet: 2SD556 , 2SD557 , 2SD558 , 2SD55A , 2SD56 , 2SD560 , 2SD560O , 2SD560R , C5198 , 2SD565 , 2SD568 , 2SD568O , 2SD568R , 2SD568Y , 2SD569 , 2SD569O , 2SD569R .

History: BLV857 | NSBA123JDP6

Keywords - 2SD560Y transistor datasheet

 2SD560Y cross reference
 2SD560Y equivalent finder
 2SD560Y lookup
 2SD560Y substitution
 2SD560Y replacement

 

 
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