All Transistors. 2SD565 Datasheet

 

2SD565 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD565
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO3

 2SD565 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD565 Datasheet (PDF)

 9.1. Size:90K  nec
2sd560.pdf

2SD565 2SD565

DATA SHEETSILICON POWER TRANSISTOR2SD560NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGThe 2SD560 is a mold power transistor developed for low- ORDERING INFORMATIONfrequency power amplifiers and low-speed switching. This transistor isOrdering Name Packageideal for direct driving from the IC output of devices such

 9.2. Size:209K  fuji
2sd560.pdf

2SD565 2SD565

 9.3. Size:213K  inchange semiconductor
2sd568.pdf

2SD565 2SD565

isc Silicon NPN Power Transistor 2SD568DESCRIPTIONHigh Collector Current:: I = 7ACLow Collector Saturation Voltage: V = 0.5V(Max)@I = 5ACE(sat) CComplement to Type 2SB707Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplifiers and low-speedswitching applications.ABSOLUTE MAXIMUM R

 9.4. Size:209K  inchange semiconductor
2sd560.pdf

2SD565 2SD565

isc Silicon NPN Darlington Power Transistor 2SD560DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)High DC Current Gain: h = 2000(Min) @I = 3.0AFE CLow Saturation VoltageComplement to Type 2SB601Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers and l

 9.5. Size:213K  inchange semiconductor
2sd569.pdf

2SD565 2SD565

isc Silicon NPN Power Transistor 2SD569DESCRIPTIONHigh Collector Current: I = 7ACLow Collector Saturation Voltage: V = 0.5V(Max)@I = 5ACE(sat) CComplement to Type 2SB708Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplifiers and low-speedswitching applications.ABSOLUTE MAXIMUM RA

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: DDTC114WCA

 

 
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