All Transistors. 2SD57 Datasheet

 

2SD57 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD57
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO66

 2SD57 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD57 Datasheet (PDF)

 0.1. Size:169K  nec
2sd571.pdf

2SD57
2SD57

 0.2. Size:20K  no
2sd575.pdf

2SD57

 0.3. Size:217K  inchange semiconductor
2sd570.pdf

2SD57
2SD57

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD570DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 70V(Min.)(BR)CEOLow Collector Saturation Voltage: V = 0.6V(Max.)@I = 2ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS

 0.4. Size:181K  inchange semiconductor
2sd577.pdf

2SD57
2SD57

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD577DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 700V(Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits .ABSOLUTE MAXIMUM RATINGS(T =25

 0.5. Size:189K  inchange semiconductor
2sd5702.pdf

2SD57
2SD57

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD5702DESCRIPTIONHigh Breakdown Voltage-: VCBO= 1500V (Min)High Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolour TV receivers.ABSOLUTE MAXIMUM RAT

 0.6. Size:188K  inchange semiconductor
2sd5703.pdf

2SD57
2SD57

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD5703DESCRIPTIONHigh Breakdown Voltage-: VCBO= 1500V (Min)High Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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