All Transistors. 2SD579 Datasheet

 

2SD579 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD579
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO66

 2SD579 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD579 Datasheet (PDF)

 9.1. Size:169K  nec
2sd571.pdf

2SD579
2SD579

 9.2. Size:20K  no
2sd575.pdf

2SD579

 9.3. Size:217K  inchange semiconductor
2sd570.pdf

2SD579
2SD579

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD570DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 70V(Min.)(BR)CEOLow Collector Saturation Voltage: V = 0.6V(Max.)@I = 2ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS

 9.4. Size:181K  inchange semiconductor
2sd577.pdf

2SD579
2SD579

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD577DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 700V(Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits .ABSOLUTE MAXIMUM RATINGS(T =25

 9.5. Size:189K  inchange semiconductor
2sd5702.pdf

2SD579
2SD579

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD5702DESCRIPTIONHigh Breakdown Voltage-: VCBO= 1500V (Min)High Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolour TV receivers.ABSOLUTE MAXIMUM RAT

 9.6. Size:188K  inchange semiconductor
2sd5703.pdf

2SD579
2SD579

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD5703DESCRIPTIONHigh Breakdown Voltage-: VCBO= 1500V (Min)High Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: DMA56401 | 2SD669AD-C

 

 
Back to Top