All Transistors. 2SD626 Datasheet

 

2SD626 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD626
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: TO3

 2SD626 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD626 Datasheet (PDF)

 9.1. Size:71K  sanyo
2sd627.pdf

2SD626

 9.2. Size:113K  sanyo
2sd621.pdf

2SD626

 9.3. Size:202K  inchange semiconductor
2sd627.pdf

2SD626
2SD626

isc Silicon NPN Power Transistor 2SD627DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Coll

 9.4. Size:208K  inchange semiconductor
2sd628.pdf

2SD626
2SD626

isc Silicon NPN Darlington Power Transistor 2SD628DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min.)CEO(sus)High DC Current Gain-: h = 1000(Min.)@I = 5AFE CLow Collector Saturation Voltage-: V = 2.0V(Max.)@ I = 5ACE (sat) CComplement to Type 2SB638Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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