2SD626 Specs and Replacement
Type Designator: 2SD626
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 300
Package: TO3
2SD626 Substitution
- BJT ⓘ Cross-Reference Search
2SD626 datasheet
isc Silicon NPN Power Transistor 2SD627 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Coll... See More ⇒
isc Silicon NPN Darlington Power Transistor 2SD628 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min.) CEO(sus) High DC Current Gain- h = 1000(Min.)@I = 5A FE C Low Collector Saturation Voltage- V = 2.0V(Max.)@ I = 5A CE (sat) C Complement to Type 2SB638 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ... See More ⇒
Detailed specifications: 2SD617, 2SD619, 2SD62, 2SD620, 2SD621, 2SD622, 2SD624, 2SD625, C5198, 2SD627, 2SD628, 2SD628H, 2SD629, 2SD629H, 2SD63, 2SD630, 2SD631
Keywords - 2SD626 pdf specs
2SD626 cross reference
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