2SD65 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD65
Material of Transistor: Ge
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.12 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO18
2SD65 Transistor Equivalent Substitute - Cross-Reference Search
2SD65 Datasheet (PDF)
2sd655.pdf
2SD655Silicon NPN EpitaxialApplicationLow frequency power amplifier, MutingOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SD655Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 15 VEmitter to base voltage VEBO 5VCollector current IC 0.7 ACollector peak current iC(peak) 1.0 A
2sd655.pdf
2SD655(BR3DG655K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features Low frequency. / Applications Low frequency power amplifier. / Equivalent Circuit / Pinning 1 2 3 PIN1Base PIN 2
2sd651.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD651DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 400V(Min)CEO(SUS)High Power DissipationLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applications.
2sd657.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD657DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 200V(Min)CEO(SUS)Excellent Safe Operating Area100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line operated audio output amplifier,and switchingpower supply drivers appl
2sd652.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD652DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 500V(Min)CEO(SUS)High Power DissipationLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line operated switchmode applications such as:Switching regu
2sd650.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD650DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 400V(Min)CEO(SUS)High Power DissipationLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line operated switchmode applications such as:Switching regu
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: DDTA144GUA | KRC866E
History: DDTA144GUA | KRC866E
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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050