2SD67 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD67
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 110 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
2SD67 Transistor Equivalent Substitute - Cross-Reference Search
2SD67 Datasheet (PDF)
2sd679.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD679DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 70V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max.)@ I = 3ACE(sat) C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose ampl
2sd673.pdf
isc Silicon NPN Power Transistors 2SD673DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh Power Dissipation-: P = 60W(Max)@T =25C CComplement to Type 2SB653Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =2
2sd670.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD670DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max.)@ I = 10ACE(sat) C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stage
2sd675.pdf
isc Silicon NPN Power Transistors 2SD675DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOHigh Power Dissipation-: P = 100W(Max)@T =25C CComplement to Type 2SB655Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =
2sd676.pdf
isc Silicon NPN Power Transistors 2SD676DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOHigh Power Dissipation-: P = 125W(Max)@T =25C CComplement to Type 2SB656Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =
Datasheet: 2SD668D , 2SD669 , 2SD669A , 2SD669AB , 2SD669AC , 2SD669B , 2SD669C , 2SD669D , SS8050 , 2SD670 , 2SD670H , 2SD671 , 2SD672 , 2SD673 , 2SD673A , 2SD674 , 2SD674A .
History: DTA115E | 2SA117 | DD05
