2SD673A Specs and Replacement
Type Designator: 2SD673A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 35
Noise Figure, dB: -
Package: TO3
2SD673A Substitution
2SD673A detailed specifications
2sd673.pdf
isc Silicon NPN Power Transistors 2SD673 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High Power Dissipation- P = 60W(Max)@T =25 C C Complement to Type 2SB653 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =2... See More ⇒
2sd679.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD679 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 70V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max.)@ I = 3A CE(sat) C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose ampl... See More ⇒
2sd670.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD670 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max.)@ I = 10A CE(sat) C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stage... See More ⇒
Detailed specifications: 2SD669C , 2SD669D , 2SD67 , 2SD670 , 2SD670H , 2SD671 , 2SD672 , 2SD673 , 2SC828 , 2SD674 , 2SD674A , 2SD675 , 2SD675A , 2SD676 , 2SD676A , 2SD677 , 2SD678 .
History: 2PB709Q
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