2SD679A Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD679A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 90 V
Maximum Collector-Emitter Voltage |Vce|: 90 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 7000
Noise Figure, dB: -
Package: TO220
2SD679A Transistor Equivalent Substitute - Cross-Reference Search
2SD679A Datasheet (PDF)
5.1. 2sd673a.pdf 
Size:38K _no
5.2. 2sd673.pdf Size:231K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD673 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High Power Dissipation- : PC= 60W(Max)@TC=25? ·Complement to Type 2SB653 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO
5.3. 2sd676.pdf Size:230K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD676 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·High Power Dissipation- : PC= 125W(Max)@TC=25? ·Complement to Type 2SB656 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO
5.4. 2sd675.pdf Size:230K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD675 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·High Power Dissipation- : PC= 100W(Max)@TC=25? ·Complement to Type 2SB655 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO
Datasheet: 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 2N5401 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .
