2SD69 Specs and Replacement

Type Designator: 2SD69

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 140 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO3

 2SD69 Substitution

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2SD69 datasheet

 0.1. Size:102K  toshiba

2sd647 2sd697.pdf pdf_icon

2SD69

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 0.2. Size:125K  panasonic

2sd691 2sd692.pdf pdf_icon

2SD69

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 0.3. Size:86K  panasonic

2sd693.pdf pdf_icon

2SD69

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 0.4. Size:209K  inchange semiconductor

2sd692.pdf pdf_icon

2SD69

isc Silicon NPN Darlingtion Power Transistor 2SD692 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- h = 1000 (Min) @ I =1 Adc FE C Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier a... See More ⇒

Detailed specifications: 2SD683A, 2SD684, 2SD684A, 2SD685, 2SD686, 2SD687, 2SD688, 2SD689, BC337, 2SD690, 2SD691, 2SD692, 2SD693, 2SD694, 2SD695, 2SD696, 2SD696A

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