2SD695 Specs and Replacement

Type Designator: 2SD695

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 350 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 350 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 60 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 150

Noise Figure, dB: -

Package: TO3A-1

 2SD695 Substitution

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2SD695 datasheet

 9.1. Size:102K  toshiba

 2sd647 2sd697.pdf pdf_icon

2SD695

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 9.2. Size:125K  panasonic

 2sd691 2sd692.pdf pdf_icon

2SD695

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 9.3. Size:86K  panasonic

 2sd693.pdf pdf_icon

2SD695

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 9.4. Size:209K  inchange semiconductor

 2sd692.pdf pdf_icon

2SD695

isc Silicon NPN Darlingtion Power Transistor 2SD692 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- h = 1000 (Min) @ I =1 Adc FE C Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier a... See More ⇒

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Detailed specifications: 2SD688, 2SD689, 2SD69, 2SD690, 2SD691, 2SD692, 2SD693, 2SD694, BD140, 2SD696, 2SD696A, 2SD697, 2SD697A, 2SD698, 2SD699, 2SD70, 2SD700

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