All Transistors. 2SD696A Datasheet

 

2SD696A Datasheet and Replacement


   Type Designator: 2SD696A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 400 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Collector-Emitter Voltage |Vce|: 350 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 100 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: TO3A-1
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2SD696A Datasheet (PDF)

 9.1. Size:102K  toshiba
 2sd647 2sd697.pdf pdf_icon

2SD696A

 9.2. Size:125K  panasonic
 2sd691 2sd692.pdf pdf_icon

2SD696A

 9.3. Size:86K  panasonic
 2sd693.pdf pdf_icon

2SD696A

 9.4. Size:209K  inchange semiconductor
 2sd692.pdf pdf_icon

2SD696A

isc Silicon NPN Darlingtion Power Transistor 2SD692DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gain-h = 1000 (Min) @ I =1 AdcFE CCollector-Emitter Breakdown Voltage-V = 80V(Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier a

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Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2N5031 | 2SA982 | 2SA416 | 2SC3298A | DMJT9435 | 2N249 | 2SA1685

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