2SD697 Specs and Replacement
Type Designator: 2SD697
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 770 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 100 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO3A-1
2SD697 Substitution
- BJT ⓘ Cross-Reference Search
2SD697 datasheet
isc Silicon NPN Darlingtion Power Transistor 2SD692 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- h = 1000 (Min) @ I =1 Adc FE C Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier a... See More ⇒
Detailed specifications: 2SD690, 2SD691, 2SD692, 2SD693, 2SD694, 2SD695, 2SD696, 2SD696A, BC557, 2SD697A, 2SD698, 2SD699, 2SD70, 2SD700, 2SD702, 2SD703, 2SD704
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